Quantum tunneling in magnetic tunneling junctions

This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth...

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Hovedforfatter: Cruz de Gracia, Evgeni (author)
Andre forfattere: Strazzabosco Dorneles, Lucio (author), Schelp, Luiz Fernando (author), Ribeiro Teixiera, Sérgio (author), Baibich, Mario Norberto (author)
Format: article
Sprog:spansk
Udgivet: 2012
Fag:
Online adgang:http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96
http://ridda2.utp.ac.pa/handle/123456789/2161
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_version_ 1869652455337230336
author Cruz de Gracia, Evgeni
author2 Strazzabosco Dorneles, Lucio
Schelp, Luiz Fernando
Ribeiro Teixiera, Sérgio
Baibich, Mario Norberto
author2_role author
author
author
author
author_browse Baibich, Mario Norberto
Cruz de Gracia, Evgeni
Ribeiro Teixiera, Sérgio
Schelp, Luiz Fernando
Strazzabosco Dorneles, Lucio
author_facet Cruz de Gracia, Evgeni
Strazzabosco Dorneles, Lucio
Schelp, Luiz Fernando
Ribeiro Teixiera, Sérgio
Baibich, Mario Norberto
author_role author
collection Repositorio Institucional de documento digitales de acceso abierto de la UTP
dc.contributor.none.fl_str_mv
dc.coverage.none.fl_str_mv


dc.creator.none.fl_str_mv Cruz de Gracia, Evgeni
Strazzabosco Dorneles, Lucio
Schelp, Luiz Fernando
Ribeiro Teixiera, Sérgio
Baibich, Mario Norberto
dc.date.none.fl_str_mv 2012-06-29
2017-07-28T17:47:50Z
2017-07-28T17:47:50Z
dc.format.none.fl_str_mv application/pdf
text/html
dc.identifier.none.fl_str_mv http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96
http://ridda2.utp.ac.pa/handle/123456789/2161
dc.language.none.fl_str_mv spa
dc.publisher.none.fl_str_mv Universidad Tecnológica de Panamá
dc.relation.none.fl_str_mv http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96/pdf
http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96/html
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/4.0/
dc.source.none.fl_str_mv 2219-6714
1680-8894
I+D Tecnológico; Vol. 8, Núm. 1 (2012): Revista I+D Tecnológico; 26-32
reponame:Repositorio Institucional de documento digitales de acceso abierto de la UTP
instname:Universidad Tecnológica de Panamá
instacron:U Tecnológica de Panamá
dc.subject.none.fl_str_mv Electronic transport, junction, magnetization, tunneling
dc.title.none.fl_str_mv Quantum tunneling in magnetic tunneling junctions
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
description This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth of the effective area-resistance product with the effective barrier thickness, and the concentration of the tunnel current in small areas of the junctions, were identified by fitting room temperature I-V curves, for each individual sample, with either Simmons’ [J. Appl. Phys. 34, 1793 (1963); 35, 2655 (1964); 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution and showing quantum tunneling as the charge transport mechanism. This mechanism, is also, verified through I-T curves.
eu_rights_str_mv openAccess
format article
id lrtest_0fbe9ca1ef2657f10b0078f4daee2808
instacron_str U Tecnológica de Panamá
institution U Tecnológica de Panamá
instname_str Universidad Tecnológica de Panamá
language spa
network_acronym_str lrtest
network_name_str lr
oai_identifier_str oai:ridda2.utp.ac.pa:123456789/2161
publishDate 2012
publishDateSort 2012
publisher.none.fl_str_mv Universidad Tecnológica de Panamá
reponame_str Repositorio Institucional de documento digitales de acceso abierto de la UTP
repository.mail.fl_str_mv
repository.name.fl_str_mv
repository_id_str
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/4.0/
spelling Quantum tunneling in magnetic tunneling junctionsCruz de Gracia, EvgeniStrazzabosco Dorneles, LucioSchelp, Luiz FernandoRibeiro Teixiera, SérgioBaibich, Mario NorbertoElectronic transport, junction, magnetization, tunnelingThis paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth of the effective area-resistance product with the effective barrier thickness, and the concentration of the tunnel current in small areas of the junctions, were identified by fitting room temperature I-V curves, for each individual sample, with either Simmons’ [J. Appl. Phys. 34, 1793 (1963); 35, 2655 (1964); 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution and showing quantum tunneling as the charge transport mechanism. This mechanism, is also, verified through I-T curves.Universidad Tecnológica de Panamá2012-06-292017-07-28T17:47:50Z2017-07-28T17:47:50Zinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdftext/htmlhttp://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96http://ridda2.utp.ac.pa/handle/123456789/21612219-67141680-8894I+D Tecnológico; Vol. 8, Núm. 1 (2012): Revista I+D Tecnológico; 26-32reponame:Repositorio Institucional de documento digitales de acceso abierto de la UTPinstname:Universidad Tecnológica de Panamáinstacron:U Tecnológica de Panamáspahttp://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96/pdfhttp://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96/htmlinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/4.0/oai:ridda2.utp.ac.pa:123456789/21612019-12-06T14:50:41Z
spellingShingle Quantum tunneling in magnetic tunneling junctions
Cruz de Gracia, Evgeni
Electronic transport, junction, magnetization, tunneling
status_str publishedVersion
title Quantum tunneling in magnetic tunneling junctions
title_full Quantum tunneling in magnetic tunneling junctions
title_fullStr Quantum tunneling in magnetic tunneling junctions
title_full_unstemmed Quantum tunneling in magnetic tunneling junctions
title_short Quantum tunneling in magnetic tunneling junctions
title_sort Quantum tunneling in magnetic tunneling junctions
topic Electronic transport, junction, magnetization, tunneling
url http://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96
http://ridda2.utp.ac.pa/handle/123456789/2161